SEMICONDUCTOR INTERFACES - ABRUPTNESS, SMOOTHNESS, AND OPTICAL-PROPERTIES

被引：23

作者：

OURMAZD, A

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 98卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(89)90187-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：72 / 81

页数：10

共 12 条

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[2]

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[3] NONLINEAR DIFFUSION IN MULTILAYERED SEMICONDUCTOR SYSTEMS [J].

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[4]

KIM Y, 1988, IN PRESS FAL P MAT R

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OURMAZD, A ;

RENTSCHLER, JR ;

TAYLOR, DW .

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[6] DETERMINATION OF THE ATOMIC CONFIGURATION AT SEMICONDUCTOR INTERFACES [J].

OURMAZD, A ;

TSANG, WT ;

RENTSCHLER, JA ;

TAYLOR, DW .

APPLIED PHYSICS LETTERS, 1987, 50 (20) :1417-1419

[7] CHEMICAL MAPPING OF SEMICONDUCTOR INTERFACES AT NEAR-ATOMIC RESOLUTION [J].

OURMAZD, A ;

TAYLOR, DW ;

CUNNINGHAM, J .

PHYSICAL REVIEW LETTERS, 1989, 62 (08) :933-936

[8]

OURMAZD A, IN PRESS

[9] CHEMICAL BEAM EPITAXY OF INP AND GAAS [J].

TSANG, WT .

APPLIED PHYSICS LETTERS, 1984, 45 (11) :1234-1236

[10] INTRAWELL EXCITON TRANSPORT IN MONOLAYER-FLAT GAAS/ALGAAS SINGLE QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].

TU, CW ;

MILLER, RC ;

PETROFF, PM ;

KOPF, RF ;

DEVEAUD, B ;

DAMEN, TC ;

SHAH, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02) :610-612

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