DRIFT VELOCITY OF ELECTRONS IN SILICON AT HIGH ELECTRIC FIELDS FROM 4.2 DEGREES TO 300 DEGREES K

The drift velocity of electrons in silicon at high electric fields is measured in the 〈111〉 direction over the range of lattice temperatures from 4.2°to 300°K. It is established that in this range a limiting drift velocity exists. Its temperature dependence is measured. The samples used and the method of measurement are briefly described. © 1969 The American Institute of Physics.