EXCITON-DONOR COMPLEXES IN SEMICONDUCTORS

被引：86

作者：

SHARMA, RR

RODRIGUEZ, S

机构：

来源：

PHYSICAL REVIEW | 1967年 / 159卷 / 03期

关键词：

D O I：

10.1103/PhysRev.159.649

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：649 / +

页数：1

共 7 条

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PARK, YS ;

LITTON, CW ;

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PHYSICAL REVIEW, 1966, 143 (02) :512-+

[6] OPTICAL PROPERTIES OF BOUND EXCITON COMPLEXES IN CADMIUM SULFIDE [J].

THOMAS, DG ;

HOPFIELD, JJ .

PHYSICAL REVIEW, 1962, 128 (05) :2135-&

[7] BOUND EXCITONS IN GAP [J].

THOMAS, DG ;

HOPFIELD, JJ ;

GERSHENZON, M .

PHYSICAL REVIEW, 1963, 131 (06) :2397-&

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