A 622-MB/S MONOLITHICALLY INTEGRATED INGAAS/INP 4-CHANNEL P-I-N FET RECEIVER ARRAY

被引：15

作者：

AKAHORI, Y ^{[1
]}

IKEDA, M ^{[1
]}

UCHIDA, N ^{[1
]}

YOSHIDA, J ^{[1
]}

SUZUKI, Y ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, YOKOSUKA ELECT COMMUN LABS, TRANSMISS SYST LABS, YOKOSUKA, KANAGAWA 23803, JAPAN

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1992年 / 4卷 / 05期

关键词：

D O I：

10.1109/68.136490

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe the sensitivity and crosstalk characteristics of a long-wavelength monolithically integrated four-channel photoreceiver army. This receiver consists of 4 p-i-n PD's, 24 JFET's and 28 level-shift diodes. The device is fabricated using MOVPE grown crystals and Be ion implantation technique. The receiver chip demonstrates a sensitivity of between -30.6 and -31.4 dBm, crosstalk below -20 dB over its operating frequency range. Sensitivity deterioration due to crosstalk, which is demonstrated for the first time, is shown to be a critical factor in system performance. The crosstalk is mainly due to parasitic inductances on the external power supply circuits.

引用

页码：470 / 472

页数：3

共 4 条

[1]

AGA K, 1991, P OFC91, P3

[2] A 622 MB/S MONOLITHICALLY INTEGRATED INGAAS-INP HIGH-SENSITIVITY TRANSIMPEDANCE PHOTORECEIVER AND A MULTICHANNEL RECEIVER ARRAY [J].