EPITAXIAL PBTIO3 THIN-FILMS GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION

被引：86
|
作者：
DEKEIJSER, M [1 ]
DORMANS, GJM [1 ]
CILLESSEN, JFM [1 ]
DELEEUW, DM [1 ]
ZANDBERGEN, HW [1 ]
机构：
[1] DELFT UNIV TECHNOL,NATL CTR HREM,2628 AL DELFT,NETHERLANDS
来源：
APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 23期
关键词：
D O I：
10.1063/1.104792
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Epitaxial PbTiO3 layers have been grown on (001)SrTi03 substrates by organometallic chemical vapor deposition using the precursors titanium-iso-propoxide and tetra-ethyl-lead. The growth temperature for these films was around 700-degrees-C. The epitaxial nature of c-axis-oriented PbTiO3 is confirmed by Rutherford backscattering spectrometry, x-ray diffraction, including pole figure analysis, and high-resolution electron microscopy (HREM). With HREM twinning has been observed.
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收藏
页码：2636 / 2638
页数：3
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