EPITAXIAL PBTIO3 THIN-FILMS GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION

被引：86

作者：

DEKEIJSER, M ^{[1
]}

DORMANS, GJM ^{[1
]}

CILLESSEN, JFM ^{[1
]}

DELEEUW, DM ^{[1
]}

ZANDBERGEN, HW ^{[1
]}

机构：

[1] DELFT UNIV TECHNOL,NATL CTR HREM,2628 AL DELFT,NETHERLANDS

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 23期

关键词：

D O I：

10.1063/1.104792

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial PbTiO3 layers have been grown on (001)SrTi03 substrates by organometallic chemical vapor deposition using the precursors titanium-iso-propoxide and tetra-ethyl-lead. The growth temperature for these films was around 700-degrees-C. The epitaxial nature of c-axis-oriented PbTiO3 is confirmed by Rutherford backscattering spectrometry, x-ray diffraction, including pole figure analysis, and high-resolution electron microscopy (HREM). With HREM twinning has been observed.

引用

页码：2636 / 2638

页数：3

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