A NEW METHOD TO FABRICATE AU/N-TYPE INP SCHOTTKY CONTACTS WITH AN INTERFACIAL LAYER

A method to fabricate Au-n-type InP Schottky contacts with an interfacial layer has been developed. The interfacial layer is formed by deposition of a P(x)O(y) layer and reaction of this layer with the InP substrate. The current-voltage and capacitance-voltage characteristics are measured at various temperatures. Excellent rectification is found in the fabricated contacts. The observed reverse currents are very low. The ideality factors are around 1.15. Apparent barrier heights q-phi-B are evaluated from the extrapolated forward saturation current I(s). They are found to be sufficiently high. The typical value of q-phi-B at room temperature is obtained as 0.88 eV. The Richardson plot ln(I(s)/T2) vs 1/T is well fitted in a straight line, where T is the temperature. From the Richardson plot, the true barrier height is estimated to be 0.41 eV. The effects of the interfacial layer are also discussed.