PHOTOEMISSION STUDIES OF MOS2

被引：28

作者：

WILLIAMS, RH

MCEVOY, AJ

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1971年 / 47卷 / 01期

关键词：

D O I：

10.1002/pssb.2220470127

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：217 / &

共 24 条

[1] PHOTOELECTRIC EMISSION AND CONTACT POTENTIALS OF SEMICONDUCTORS [J].

APKER, L ;

TAFT, E ;

DICKEY, J .

PHYSICAL REVIEW, 1948, 74 (10) :1462-1474

[2]

BERGLUND CN, 1964, PHYS REV A-GEN PHYS, V136, P1030

[3] A SEMI-EMPIRICAL TIGHT-BINDING CALCULATION OF BAND STRUCTURE OF MOS2 [J].

BROMLEY, RA .

PHYSICS LETTERS A, 1970, A 33 (04) :242-&

[4] OPTICAL ABSORPTION PROPERTIES OF SYNTHETIC MOS2 [J].

CLARK, A ;

WILLIAMS, RH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1968, 1 (09) :1222-&

[5] EFFECTS OF PRESSURE AND TEMPERATURE ON EXCITON ABSORPTION AND BAND STRUCTURE OF LAYER CRYSTALS - MOLYBDENUM DISULPHIDE [J].

CONNELL, GAN ;

WILSON, JA ;

YOFFE, AD .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (02) :287-&

[6]

DiStefano T. H., 1970, Review of Scientific Instruments, V41, P180, DOI 10.1063/1.1684464

[7]

Eden R. C., 1970, Review of Scientific Instruments, V41, P252, DOI 10.1063/1.1684483

[8] PHOTOVOLTAGE IN THIN CRYSTALS OF MOS2 [J].

EVANS, BL ;

THOMPSON, KT .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1968, 1 (12) :1619-&

[9]

Greenaway D.L., 1968, OPTICAL PROPERTIES B

[10] ELECTRONIC BAND STRUCTURE OF LAYER-TYPE CRYSTAL MOS2 (ATOMIC MODEL) [J].

HARPER, PG ;

EDMONDSON, DR .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1971, 44 (01) :59-+

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