CURRENT PROBLEMS IN LOW-ENERGY ION-BEAM MATERIALS ANALYSIS WITH SIMS

A major requirement of the secondary ion mass spectrometry (SIMS) technique is a universal procedure for preparing standards by introducing controlled amounts of any desired element into any substrate. Ion implantation ideally fills this role. Conversely, a major requirement for ion implantation research is a universal analytical technique capable of characterizing the in-depth distribution of implanted species at concentrations of ~ 1 ppm and below. This requirement is being increasingly satisfied by secondary ion mass spectrometry. This review will illustrate the complementary nature of these two techniques with examples from current research. Copyright © 1978 by The Institute of Electrical and Electronics Engineers, Inc.