HIGH-POWER OPERATION MODE OF PULSED IMPATT DIODES

被引：21

作者：

BEHR, W

LUY, JF

机构：

[1] Daimler-Benz AG Research Center

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 05期

关键词：

D O I：

10.1109/55.55251

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

At 96 GHz an output power of 42 W is achieved in a pulsed operation mode from silicon double-drift IMPATT diodes. This is about twice the value reported up to now. These diodes are mounted on diamond heat sinks. Conventional Read-type theory fails to explain these results because of the current densities employed in the experiments. The large-signal avalanche resonant frequency is close to the operation frequency. A Misawa-type operation mode is suggested. © 1990 IEEE

引用

页码：206 / 208

页数：3