HIGH-POWER OPERATION MODE OF PULSED IMPATT DIODES

被引：21
作者：
BEHR, W
LUY, JF
机构：
[1] Daimler-Benz AG Research Center
来源：
IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 05期
关键词：
D O I：
10.1109/55.55251
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
At 96 GHz an output power of 42 W is achieved in a pulsed operation mode from silicon double-drift IMPATT diodes. This is about twice the value reported up to now. These diodes are mounted on diamond heat sinks. Conventional Read-type theory fails to explain these results because of the current densities employed in the experiments. The large-signal avalanche resonant frequency is close to the operation frequency. A Misawa-type operation mode is suggested. © 1990 IEEE
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页码：206 / 208
页数：3
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