INCLINED EPITAXY OF (411) BETA SILICON-CARBIDE ON (511) SILICON BY CHEMICAL VAPOR-DEPOSITION

被引：7

作者：

SHIGETA, M

NAKANISHI, K

FUJII, Y

FURUKAWA, K

HATANO, A

UEMOTO, A

SUZUKI, A

NAKAJIMA, S

机构：

来源：

关键词：

D O I：

10.1063/1.97767

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1684 / 1685

页数：2

共 12 条

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[J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (02) : 48 - 49
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[7] NISHINO S, 1983, 15TH C SOL STAT DEV, P317
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[9] HIGH-TEMPERATURE ELECTRICAL-PROPERTIES OF 3C-SIC EPITAXIAL LAYERS GROWN BY CHEMICAL VAPOR-DEPOSITION
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[J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) : 692 - 693