EFFECT OF WAVEFUNCTION ANISOTROPY ON THE METAL-INSULATOR-TRANSITION DENSITY IN MANY-VALLEY SEMICONDUCTORS

被引：40
作者：
BHATT, RN
机构：
来源：
PHYSICAL REVIEW B | 1981年 / 24卷 / 06期
关键词：
D O I：
10.1103/PhysRevB.24.3630
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：3630 / 3633
页数：4
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