EFFECT OF WAVEFUNCTION ANISOTROPY ON THE METAL-INSULATOR-TRANSITION DENSITY IN MANY-VALLEY SEMICONDUCTORS

被引：40
作者：
BHATT, RN
机构：
来源：
PHYSICAL REVIEW B | 1981年 / 24卷 / 06期
关键词：
D O I：
10.1103/PhysRevB.24.3630
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：3630 / 3633
页数：4
相关论文
共 25 条
[1]  
ANDERSON PW, 1958, PHYS REV, V102, P1008
[2]   SINGLE-PARTICLE ENERGY-LEVELS IN DOPED SEMICONDUCTORS AT DENSITIES BELOW THE METAL-NONMETAL TRANSITION [J].
BHATT, RN ;
RICE, TM .
PHYSICAL REVIEW B, 1981, 23 (04) :1920-1935
[3]   HIGH-STRESS PIEZORESISTANCE AND MOBILITY IN DEGENERATE SB-DOPED GERMANIUM [J].
CUEVAS, M ;
FRITZSCH.H .
PHYSICAL REVIEW, 1965, 137 (6A) :1847-&
[4]   HIGH-STRESS PIEZORESISTANCE IN DEGENERATE ARSENIC-DOPED GERMANIUM [J].
CUEVAS, M ;
FRITZSCH.H .
PHYSICAL REVIEW, 1965, 139 (5A) :1628-&
[5]   UNIVERSALITY ASPECTS OF METAL-NONMETAL TRANSITION IN CONDENSED MEDIA [J].
EDWARDS, PP ;
SIENKO, MJ .
PHYSICAL REVIEW B, 1978, 17 (06) :2575-2581
[6]   HIGHER DONOR EXCITED STATES FOR PROLATE-SPHEROID CONDUCTION BANDS - A REEVALUATION OF SILICON AND GERMANIUM [J].
FAULKNER, RA .
PHYSICAL REVIEW, 1969, 184 (03) :713-&
[7]  
FISHER P, 1969, PHYSICS SOLID STATE, P149
[8]   EFFECT OF UNIAXIAL COMPRESSION ON IMPURITY CONDUCTION IN N-TYPE GERMANIUM [J].
FRITZCHE, H .
PHYSICAL REVIEW, 1962, 125 (05) :1552-&
[9]   EFFECT OF STRESS ON DONOR WAVE FUNCTIONS IN GERMANIUM [J].
FRITZSCHE, H .
PHYSICAL REVIEW, 1962, 125 (05) :1560-&
[10]  
GREENE RL, 1977, PHYS REV B, V15, P2217, DOI 10.1103/PhysRevB.15.2217
123