TEMPERATURE-DEPENDENCE OF THE RESISTANCE OF ONE-DIMENSIONAL METAL-FILMS WITH DOMINANT NYQUIST PHASE BREAKING

被引：8

作者：

ECHTERNACH, PM

GERSHENSON, ME

BOZLER, HM

BOGDANOV, AL

NILSSON, B

机构：

[1] JET PROP LAB,PASADENA,CA 91109

[2] CHALMERS UNIV TECHNOL,SWEDISH NANOMETER LAB,S-41296 GOTHENBURG,SWEDEN

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.50.5748

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the results of a comprehensive study of the temperature dependences of the resistance of one-dimensional narrow gold films with respect to the effects of weak localization (WL) and electron-electron interaction (EEI) in a wide temperature range. The electron wave-function coherence for such samples is limited by electron-electron collisions with small energy transfer (the Nyquist phase-breaking mechanism). It is shown that the temperature dependence of the WL contribution to the resistance, obtained for such a case, is in excellent agreement with the theory by Altshuler, Aronov, and Khmelnitskii. The experimental dependences DELTAR (T) for one-dimensional samples are described quantitatively by the sum of the WL contribution, the contribution of the singlet part of the diffusion channel of EEI, and the contribution of the quantum interference between electron-phonon and electron-impurity scattering.

引用

页码：5748 / 5751

页数：4

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