IONIZATION COEFFICIENTS IN SEMICONDUCTORS - NONLOCALIZED PROPERTY

被引：151

作者：

OKUTO, Y ^{[1
]}

CROWELL, CR ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007

来源：

PHYSICAL REVIEW B | 1974年 / 10卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.10.4284

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：4284 / 4296

页数：13

相关论文

共 16 条

[1] THRESHOLD ENERGIES FOR ELECTRON-HOLE PAIR PRODUCTION BY IMPACT IONIZATION IN SEMICONDUCTORS
ANDERSON, CL
CROWELL, CR
[J]. PHYSICAL REVIEW B, 1972, 5 (06): : 2267 - &
[2] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS
BARAFF, GA
[J]. PHYSICAL REVIEW, 1962, 128 (06): : 2507 - &
[3] BARAFF GA, PRIVATE COMMUNICATIO
[4] TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS
CROWELL, CR
SZE, SM
[J]. APPLIED PHYSICS LETTERS, 1966, 9 (06) : 242 - &
[5] LEE CA, 1964, PHYS REV, V134, P761
[6] CHARGE MULTIPLICATION IN GAP P-N JUNCTIONS
LOGAN, RA
WHITE, HG
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3945 - &
[7] LOGAN RA, 1966, J PHYS SOC JPN, VS 21, P434
[8] AVALANCHE BREAKDOWN IN GERMANIUM
MILLER, SL
[J]. PHYSICAL REVIEW, 1955, 99 (04): : 1234 - 1241
[9] CHARGE MULTIPLICATION IN SILICON P-N JUNCTIONS
MOLL, JL
VANOVERSTRAETEN, R
[J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 147 - 157
[10] ENERGY-CONSERVATION CONSIDERATIONS IN CHARACTERIZATION OF IMPACT IONIZATION IN SEMICONDUCTORS
OKUTO, Y
CROWELL, CR
[J]. PHYSICAL REVIEW B, 1972, 6 (08): : 3076 - &