Thermoelectric Properties of Half-Heusler TiCoSb Synthesized by Mechanical Alloying Process

被引:2
作者
Ur, Soon-Chul [1 ]
机构
[1] Chungju Natl Univ, RIC ReSEM, Dept Mat Sci & Engn, 50 Daehangno, Chungju 380702, Chungbuk, South Korea
来源
KOREAN JOURNAL OF MATERIALS RESEARCH | 2011年 / 21卷 / 10期
关键词
half-Heusler; TiCoSb; thermoelectric; mechanical alloying;
D O I
10.3740/MRSK.2011.21.10.542
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Half-Heusler alloys are a potential thermoelectric material for use in high-temperature applications. In an attempt to produce half-Heusler thermoelectric materials with fine microstructures, TiCoSb was synthesized by the mechanical alloying of stoichiometric elemental powder compositions and then consolidated by vacuum hot pressing. The phase transformations during the mechanical alloying and hot consolidation process were investigated using XRD and SEM. A single-phase, halfHeusler allow was successfully produced by the mechanical alloying process, but a minor portion of the second phase of the CoSb formation was observed after the vacuum hot pressing. The thermoelectric properties as a function of the temperature were evaluated for the hot-pressed specimens. The Seebeck coefficients in the test range showed negative values, representing n-type conductivity, and the absolute value was found to be relatively low due to the existence of the second phase. It is shown that the electrical conductivity is relatively high and that the thermal conductivities are compatibly low in MA TiCoSb. The maximum ZT value was found to be relatively low in the test temperature range, possibly due to the lower Seebeck coefficient. The Hall mobility value appeared to be quite low, leading to the lower value of Seebeck coefficient. Thus, it is likely that the single phase produced by mechanical alloying process will show much higher ZT values after an excess Ti addition. It is also believed that further property enhancement can be obtained if appropriate dopants are selectively introduced into this MA TiCoSb System.
引用
收藏
页码:542 / 545
页数:4
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