HIGH-GAIN MONOLITHIC W-BAND LOW-NOISE AMPLIFIERS BASED ON PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTORS

Five versions of monolithic W-band 0.1 mu m A1GaAs/InGaAs/GaAs pseudomorphic High Electron Mobility Transistor, four-stage, Low Noise Amplifiers based on two different designs were developed. These millimeter wave monolithic integrated circuits have produced a minimum noise figure of 3.5 dB with 23.0 dB gain at 92 GHz and a maximum gain of 33.5 dB with a 6.2 dB noise figure at 102 GHz. This is the highest gain yet reported for a single chip W-band amplifier. The chips feature coplanar waveguide circuit elements and compact size for low-cost production, single-polarity bias requirement, and a minimum of DC bonding pads.