ULTRASHORT PULSES IN DIFFRACTION-LIMITED BEAM FROM DIODE-LASER ARRAYS WITH EXTERNAL-CAVITY

被引：2
|
作者：
CHELNOKOV, AV
LOURTIOZ, JM
GAVRILOVIC, P
机构：
[1] Institut d'Electronique Fondamentale, URA 22 du CNRS, Universite Paris XI, Bat. 220
[2] Microelectronics Center, Polaroid Corporation, Cambridge, Massachusetts 02139
来源：
ELECTRONICS LETTERS | 1993年 / 29卷 / 10期
关键词：
SEMICONDUCTOR LASERS; LASERS; PULSE GENERATION;
D O I：
10.1049/el:19930575
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Picosecond pulses are generated in a diffraction-limited beam from passive (hybrid) modelocked conventional (lambda = 0.8 mum) diode laser arrays in an external cavity. The emitted energy (10-20 pJ) is almost one order of magnitude higher than that obtained from single stripe quantum well lasers at similar pulse durations. The shortest pulses (approximately 3 ps, 3 nm spectral width) are obtained strong saturable absorbers and 1% antireflection coatings. Correspondingly, external cavities with relatively low angular selectivity can be used in these conditions.
引用
收藏
页码：861 / 862
页数：2
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