ULTRASHORT PULSES IN DIFFRACTION-LIMITED BEAM FROM DIODE-LASER ARRAYS WITH EXTERNAL-CAVITY

被引：2

作者：

CHELNOKOV, AV

LOURTIOZ, JM

GAVRILOVIC, P

机构：

[1] Institut d'Electronique Fondamentale, URA 22 du CNRS, Universite Paris XI, Bat. 220

[2] Microelectronics Center, Polaroid Corporation, Cambridge, Massachusetts 02139

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 10期

关键词：

SEMICONDUCTOR LASERS; LASERS; PULSE GENERATION;

D O I：

10.1049/el:19930575

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Picosecond pulses are generated in a diffraction-limited beam from passive (hybrid) modelocked conventional (lambda = 0.8 mum) diode laser arrays in an external cavity. The emitted energy (10-20 pJ) is almost one order of magnitude higher than that obtained from single stripe quantum well lasers at similar pulse durations. The shortest pulses (approximately 3 ps, 3 nm spectral width) are obtained strong saturable absorbers and 1% antireflection coatings. Correspondingly, external cavities with relatively low angular selectivity can be used in these conditions.

引用

页码：861 / 862

页数：2

共 8 条

[1] WAVELENGTH-TUNABLE DIFFRACTION-LIMITED OPERATION OF A STANDARD HIGH-POWER DIODE-LASER ARRAY USING AN OFF-CENTERED EXTENDED CAVITY [J].