OPTICAL AND ELECTRICAL-PROPERTIES OF TEXTURED MOSE2 LAYERS OBTAINED BY ANNEALING MO AND TE THIN-FILMS UNDER SE PRESSURE

被引：10
作者：
POUZET, J
BERNEDE, JC
OUADAH, A
机构：
[1] Laboratoire de Physique des Matériaux pour l'Electronique, Faculté des Sciences et des Techniques, Université de Nantes
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1993年 / 139卷 / 02期
关键词：
D O I：
10.1002/pssa.2211390220
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Textured MoSe2 layers are obtained by solid state reaction, induced by annealing under Se pressure, between Mo and Te in thin film form. These layers are investigated by optical absorption and electrical resistivity measurements. The results are compared to textured MoSe, layers obtained by dc diode sputtering. The optical properties are enhanced and the electrical resistivity is governed by hopping conduction in the low temperature range (80 to 200 K) and by grain boundary scattering mechanisms at higher temperatures.
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页码：471 / 479
页数：9
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