SEMICONDUCTOR-LASER ANALYSIS - GENERAL-METHOD FOR CHARACTERIZING DEVICES OF VARIOUS CROSS-SECTIONAL GEOMETRIES

被引：36

作者：

SHORE, KA ^{[1
]}

ROZZI, TE ^{[1
]}

INTVELD, GH ^{[1
]}

机构：

[1] EINDHOVEN UNIV TECHNOL,DEPT MATH,EINDHOVEN,NETHERLANDS

来源：

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1980年 / 127卷 / 05期

关键词：

Compendex;

D O I：

10.1049/ip-i-1.1980.0046

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

LASERS, SEMICONDUCTOR

引用

收藏

页码：221 / 229

页数：9

相关论文

共 10 条

[1] LATERAL-MODE BEHAVIOR IN NARROW STRIPE LASERS
ASBECK, PM
CAMMACK, DA
DANIELE, JJ
KLEBANOFF, V
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) : 727 - 733
[2] NONLINEARITY IN POWER-OUTPUT-CURRENT CHARACTERISTICS OF STRIPE-GEOMETRY INJECTION-LASERS
CHINONE, N
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3237 - 3243
[3] GAAS DOUBLE HETEROSTRUCTURE LASING BEHAVIOR ALONG JUNCTION PLANE
HAKKI, BW
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) : 292 - 302
[4] LATERAL TRANSVERSE-MODE INSTABILITY AND ITS STABILIZATION IN STRIPE GEOMETRY INJECTION-LASERS
LANG, R
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) : 718 - 726
[5] LANG R, 1977, JPN J APPL PHYS, V16, P205, DOI 10.1143/JJAP.16.205
[6] NONLINEARITIES IN EMISSION CHARACTERISTICS OF STRIPE-GEOMETRY (ALGA) AS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS
PAOLI, TL
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1976, 12 (12) : 770 - 776
[7] 2-DIMENSIONAL ANALYSIS OF GAAS DOUBLE HETERO STRIPE-GEOMETRY LASER
ROZZI, T
ITOH, T
GRUN, L
[J]. RADIO SCIENCE, 1977, 12 (04) : 543 - 549
[8] ROZZI TE, 1978, 4TH P EUR C OPT COMM, P364
[9] TAMIR T, 1975, INTEGRATED OPTICS, P108
[10] THOMPSON GHB, 1978, SOLID STATE ELECTRON, V2, P12