INTERFACE PROPERTIES OF SI-(SIO2)-AL2 O3 STRUCTURES

[1] DEPOSITION AND PROPERTIES OF ALUMINUM OXIDE OBTAINED BY PYROLYTIC DECOMPOSITION OF AN ALUMINUM ALKOXIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (09) : 948 - &

[2] SI-SIO2 FAST INTERFACE STATE MEASUREMENTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) : 760 - +

[3] PREPARATION OPTICAL AND DIELECTRIC PROPERTIES OF VAPOR-DEPOSITED NIOBIUM OXIDE THIN FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (02) : 234 - +

[4] GEVERS M, 1946, T FARADAY SOC A, V42, P47

[5] SOME PROPERTIES OF SIO2 FILMS DEPOSITED BY REACTION OF SIH4 WITH WATER VAPOR [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (10) : 1176 - +

[6] EVIDENCE OF HOLE INJECTION AND TRAPPING IN SILICON NITRIDE FILMS PREPARED BY REACTIVE SPUTTERING [J]. APPLIED PHYSICS LETTERS, 1967, 10 (03) : 97 - &

[7] MATSUSHITA M, 1968, MAY EL SOC M BOST

[8] MEMMING R, 1964, PHILIPS RES REP, V19, P323

[9] A STUDY OF RADIATION EFFECTS ON SIO2 AND A12O3 LAYERS USING THERMOLUMINESCENCE GLOW CURVE TECHNIQUES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1968, NS15 (06) : 154 - +

[10] AL2O3-SILICON MOS FIELD EFFECT TRANSISTORS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (02) : 277 - +

[1] DEPOSITION AND PROPERTIES OF ALUMINUM OXIDE OBTAINED BY PYROLYTIC DECOMPOSITION OF AN ALUMINUM ALKOXIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (09) : 948 - &

[2] SI-SIO2 FAST INTERFACE STATE MEASUREMENTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) : 760 - +

[3] PREPARATION OPTICAL AND DIELECTRIC PROPERTIES OF VAPOR-DEPOSITED NIOBIUM OXIDE THIN FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (02) : 234 - +

[4] GEVERS M, 1946, T FARADAY SOC A, V42, P47

[5] SOME PROPERTIES OF SIO2 FILMS DEPOSITED BY REACTION OF SIH4 WITH WATER VAPOR [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (10) : 1176 - +

[6] EVIDENCE OF HOLE INJECTION AND TRAPPING IN SILICON NITRIDE FILMS PREPARED BY REACTIVE SPUTTERING [J]. APPLIED PHYSICS LETTERS, 1967, 10 (03) : 97 - &

[7] MATSUSHITA M, 1968, MAY EL SOC M BOST

[8] MEMMING R, 1964, PHILIPS RES REP, V19, P323

[9] A STUDY OF RADIATION EFFECTS ON SIO2 AND A12O3 LAYERS USING THERMOLUMINESCENCE GLOW CURVE TECHNIQUES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1968, NS15 (06) : 154 - +

[10] AL2O3-SILICON MOS FIELD EFFECT TRANSISTORS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (02) : 277 - +