SECONDARY-ION MASS-SPECTROMETRY STUDY OF THE MIGRATION OF SI IN PLANAR-DOPED GAAS AND AL0.25GA0.75AS

被引：46
作者：
LANZILLOTTO, AM [1 ]
SANTOS, M [1 ]
SHAYEGAN, M [1 ]
机构：
[1] PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08544
来源：
APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 14期
关键词：
D O I：
10.1063/1.101582
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：1445 / 1447
页数：3
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