CRITIQUE OF (TIME)1/3 KINETICS OF DEFECT FORMATION IN AMORPHOUS SI-H AND A POSSIBLE ALTERNATIVE MODEL - COMMENT ON KINETICS OF THE STAEBLER-WRONSKI EFFECT IN HYDROGENATED AMORPHOUS-SILICON

被引：14
作者：
REDFIELD, D
机构：
来源：
APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 04期
关键词：
D O I：
10.1063/1.100974
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：398 / 399
页数：2
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[7]   KINETICS OF THE STAEBLER-WRONSKI EFFECT IN HYDROGENATED AMORPHOUS-SILICON [J].
STUTZMANN, M ;
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[8]   RESOLUTION OF AMORPHOUS-SILICON THIN-FILM TRANSISTOR INSTABILITY MECHANISMS USING AMBIPOLAR TRANSISTORS [J].
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