RADIATION RESPONSE OF MOS CAPACITORS CONTAINING FLUORINATED OXIDES

[11] NISHIOKA Y, 1987, IN PRESS IEEE ELECTR, V8

[12] RADIATION-INDUCED INTERFACE-STATE GENERATION IN MOS DEVICES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) : 1178 - 1184

[13] A MEASUREMENT OF THE EFFECT OF INTRINSIC FILM STRESS ON THE OVERALL RATE OF THERMAL-OXIDATION OF SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) : 2815 - 2816

[14] WANG Y, 1985, 1985 IEEE SISC FT LA

[15] SURFACE-CHEMISTRY OF HF PASSIVATED SILICON - X-RAY PHOTOELECTRON AND ION-SCATTERING SPECTROSCOPY RESULTS [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) : 3232 - 3234

[16] UNUSUALLY LOW SURFACE-RECOMBINATION VELOCITY ON SILICON AND GERMANIUM SURFACES [J]. PHYSICAL REVIEW LETTERS, 1986, 57 (02) : 249 - 252

[17] DEPENDENCE OF X-RAY GENERATION OF INTERFACE TRAPS ON GATE METAL INDUCED INTERFACIAL STRESS IN MOS STRUCTURES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) : 1261 - 1266

[11] NISHIOKA Y, 1987, IN PRESS IEEE ELECTR, V8

[12] RADIATION-INDUCED INTERFACE-STATE GENERATION IN MOS DEVICES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) : 1178 - 1184

[13] A MEASUREMENT OF THE EFFECT OF INTRINSIC FILM STRESS ON THE OVERALL RATE OF THERMAL-OXIDATION OF SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) : 2815 - 2816

[14] WANG Y, 1985, 1985 IEEE SISC FT LA

[15] SURFACE-CHEMISTRY OF HF PASSIVATED SILICON - X-RAY PHOTOELECTRON AND ION-SCATTERING SPECTROSCOPY RESULTS [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) : 3232 - 3234

[16] UNUSUALLY LOW SURFACE-RECOMBINATION VELOCITY ON SILICON AND GERMANIUM SURFACES [J]. PHYSICAL REVIEW LETTERS, 1986, 57 (02) : 249 - 252

[17] DEPENDENCE OF X-RAY GENERATION OF INTERFACE TRAPS ON GATE METAL INDUCED INTERFACIAL STRESS IN MOS STRUCTURES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) : 1261 - 1266