RADIATION RESPONSE OF MOS CAPACITORS CONTAINING FLUORINATED OXIDES

被引：110

作者：

DASILVA, EF ^{[1
]}

NISHIOKA, Y ^{[1
]}

MA, TP ^{[1
]}

机构：

[1] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1987年 / 34卷 / 06期

关键词：

D O I：

10.1109/TNS.1987.4337451

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1190 / 1195

页数：6

共 17 条

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