RADIATION RESPONSE OF MOS CAPACITORS CONTAINING FLUORINATED OXIDES

被引：110

作者：

DASILVA, EF ^{[1
]}

NISHIOKA, Y ^{[1
]}

MA, TP ^{[1
]}

机构：

[1] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1987年 / 34卷 / 06期

关键词：

D O I：

10.1109/TNS.1987.4337451

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1190 / 1195

页数：6

共 17 条

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[2] 2 DISTINCT INTERFACE TRAP PEAKS IN RADIATION-DAMAGED METAL/SIO2/SI STRUCTURES
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MA, TP
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (04) : 270 - 272
[3] DIFFUSION OF RADIOLYTIC MOLECULAR-HYDROGEN AS A MECHANISM FOR THE POST-IRRADIATION BUILDUP OF INTERFACE STATES IN SIO2-ON-SI STRUCTURES
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[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) : 2524 - 2533
[4] RADIATION-INDUCED DEFECTS IN SIO2 AS DETERMINED WITH XPS
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GRUNTHANER, PJ
MASERJIAN, J
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) : 1462 - 1466
[5] THE LOCALIZATION AND CRYSTALLOGRAPHIC DEPENDENCE OF SI SUBOXIDE SPECIES AT THE SIO2/SI INTERFACE
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HECHT, MH
GRUNTHANER, FJ
JOHNSON, NM
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (02) : 629 - 638
[6] A VISCOUS-FLOW MODEL TO EXPLAIN THE APPEARANCE OF HIGH-DENSITY THERMAL SIO2 AT LOW OXIDATION TEMPERATURES
IRENE, EA
TIERNEY, E
ANGILELLO, J
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) : 2594 - 2597
[7] KERN W, 1970, RCA REV, V31, P187
[8] INTRINSIC SIO2 FILM STRESS MEASUREMENTS ON THERMALLY OXIDIZED SI
KOBEDA, E
IRENE, EA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01): : 15 - 19
[9] A FRAMEWORK FOR UNDERSTANDING RADIATION-INDUCED INTERFACE STATES IN SIO2 MOS STRUCTURES
MCLEAN, FB
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) : 1651 - 1657
[10] FLUORINE-ENHANCED THERMAL-OXIDATION OF SILICON IN THE PRESENCE OF NF3
MORITA, M
KUBO, T
ISHIHARA, T
HIROSE, M
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (12) : 1312 - 1314

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