INFLUENCE OF SAMPLE GEOMETRY ON THE MAGNETIC-FIELD INDUCED METAL-INSULATOR-TRANSITION IN N-HGCDTE

被引：5

作者：

GEBHARDT, J

NIMTZ, G

机构：

[1] Univ zu Koeln, West Ger, Univ zu Koeln, West Ger

来源：

SOLID STATE COMMUNICATIONS | 1987年 / 63卷 / 07期

关键词：

D O I：

10.1016/0038-1098(87)90854-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：573 / 574

页数：2

共 20 条

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[7] ANOMALOUS HALL-EFFECT BELOW THE MAGNETIC-FIELD-INDUCED METAL-INSULATOR-TRANSITION IN NARROW-GAP SEMICONDUCTORS [J].

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[8]

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[9] MAGNETO-TRANSPORT ANOMALY IN SEMICONDUCTORS AT LOW CARRIER-DENSITIES, A WIGNER CONDENSATION [J].

NIMTZ, G ;

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[10] MAGNETIC-FIELD-INDUCED LOCALIZATION TRANSITION IN HGCDTE - COMMENT [J].

NIMTZ, G ;

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PHYSICAL REVIEW LETTERS, 1985, 55 (04) :443-443

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