CHEMICAL-VAPOR-DEPOSITION OF SILVER

被引：99

作者：

YUAN, Z ^{[1
]}

DRYDEN, NH ^{[1
]}

VITTAL, JJ ^{[1
]}

PUDDEPHATT, RJ ^{[1
]}

机构：

[1] UNIV WESTERN ONTARIO,DEPT CHEM,LONDON,ON N6A 5B7,CANADA

来源：

CHEMISTRY OF MATERIALS | 1995年 / 7卷 / 09期

关键词：

D O I：

10.1021/cm00057a019

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The complexes [Ag(hfac)(PRs)] and [Ag(fod)(PR(3))] (hfac 1,1,1,5,5,5-hexafluoropentanedionato; fod = 2,2-dimethyl-6,6,7,7,8,8,8-heptafluoro-3,5-octanedionato; R = CH3, C2H5) have been prepared by displacement of olefin from [Ag(hfac)(alkene)] compounds by the phosphines PR(3) or by direct reaction of silver(I) oxide, PR(3) and the respective beta-diketone. The complex [Ag(fod)(PEt(3))] melts at 26-28 degrees C and so can act as a liquid CVD precursor above this temperature. Unlike several other silver(I) hfac complexes, these phosphine derivatives are monomeric, as shown by an X-ray structure determination of [Ag(hfac)(PMe(3))], and they are volatile. Each complex has been shown to be an excellent precursor for the thermal chemical vapor deposition of silver films at temperatures of 250-350 degrees C. The resulting films are shown by XPS and EDX analysis to contain silver with some carbon impurity. Pure silver films are formed by CVD from [Ag(fod)(PR(3))] at 300 degrees C by using moist hydrogen as carrier gas. The SEM image of a film grown from [Ag(hfac)(PMe(3))] at 350 degrees C shows a rough surface with average grain size of 1-2 mu m, but smoother films with grain sizes of 0.1-0.25 mu m are formed by CVD from [Ag(fod)(PR(3))] under H-2.

引用

页码：1696 / 1702

页数：7

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