PHYSICS OF SEMICONDUCTOR MICROCAVITY LASERS

被引:45
作者
KOCH, SW
JAHNKE, F
CHOW, WW
机构
[1] UNIV MARBURG, CTR MAT SCI, D-35032 MARBURG, GERMANY
[2] SANDIA NATL LABS, DEPT SEMICOND PHYS, ALBUQUERQUE, NM 87185 USA
关键词
D O I
10.1088/0268-1242/10/6/002
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This review summarizes recent developments and successes in the theoretical modelling of the characteristics of semiconductor microcavity lasers. After a discussion of the basic laser properties, results of a quasi-equilibrium many-body theory are presented which are very useful for the understanding of microcavity laser operation not too far above the laser threshold. Non-equilibrium phenomena, such as spectral and kinetic hole burning as well as plasma heating effects, are analysed using a quantum kinetic approach. Comparisons with experimental observations are discussed, before open problems and future challenges are outlined.
引用
收藏
页码:739 / 751
页数:13
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