ANNEALING AMBIENT - A USEFUL PROBE FOR INTERFACE INTERACTIONS IN THIN-FILMS

被引：18

作者：

CHANG, CA

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 11期

关键词：

D O I：

10.1063/1.92199

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：860 / 862

页数：3

共 13 条

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CHANG, CA .

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CHANG, CA ;

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[4] EFFECT OF OXYGEN ON THE DIFFUSION OF NI IN PT IN PT-NI-PT FILMS [J].

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[5] AMBIENT EFFECTS ON THE OUT-DIFFUSION OF GAAS THROUGH THIN GOLD-FILMS [J].

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[6]

CHANG CC, UNPUBLISHED

[7] LOW-TEMPERATURE MIGRATION OF SILICON THROUGH METAL FILMS IMPORTANCE OF SILICON-METAL INTERFACE [J].

HIRAKI, A ;

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MAYER, JW .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 7 (02) :401-&

[8] FORMATION OF SILICON OXIDE OVER GOLD LAYERS ON SILICON SUBSTRATES [J].

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JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) :3643-&

[9]

KANG KD, 1969, IEEE T ELECTRON DEV, VED16, P356, DOI 10.1109/T-ED.1969.16757

[10]

NELSON GC, 1976, STP596 ASTM AM SOC T, P68

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