GROWTH AND MAGNETIC STUDIES OF EPITAXIAL-FILMS OF FE, CO AND NI ON CU(100)/SI(100)

We have studied the growth of single-crystal films of fcc Cu(100) on freshly HF-etched Si(100) substrates at room temperature in a MBE deposition system. Using Cu(100) as a seed layer we have grown Fe, Co and Ni in the thickness range of 10-500 angstrom. X-ray diffraction, reflection high-energy electron diffraction (RHEED) and ferromagnetic resonance (FMR) measurements confirm the epitaxial growth of Ni and Co on Cu(100) with a fcc(100) structure whereas Fe grows with bcc(110) Pitsch orientation relationships.