ULTRAHIGH SENSITIVITY STIMULATED RAMAN GAIN SPECTROSCOPY

被引：50

作者：

LEVINE, BF

BETHEA, CG

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1980年 / 16卷 / 01期

关键词：

D O I：

10.1109/JQE.1980.1070342

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using a synchronously pumped mode-locked dye laser system, the authors have obtained a factor of 300 improvement in signal to noise ratio (S/N) over previous CW experiments using stimulated Raman gain spectroscopy, and achieved an S/N equals 200,000 for a 1 s integration time in bulk benzene. This result confirms the sensitivity of the picosecond Raman gain approach and would allow the detection of a monolayer using a pump intensity of 100 MW/cm**2.

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页码：85 / 89

页数：5

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