ON THE (110) ORIENTATION AS THE PREFERRED ORIENTATION FOR THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON GE, GAP ON SI, AND SIMILAR ZINCBLENDE-ON-DIAMOND SYSTEMS

被引：92

作者：

KROEMER, H

POLASKO, KJ

WRIGHT, SC

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 09期

关键词：

D O I：

10.1063/1.91643

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：763 / 765

页数：3

共 15 条

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