INFRARED ABSORPTION AND OXYGEN CONTENT IN SILICON AND GERMANIUM

被引：362

作者：

KAISER, W

KECK, PH

LANGE, CF

机构：

来源：

PHYSICAL REVIEW | 1956年 / 101卷 / 04期

关键词：

D O I：

10.1103/PhysRev.101.1264

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：1264 / 1268

页数：5

相关论文

共 50 条

[21] INFRARED-ABSORPTION SPECTROSCOPY FOR THE CHARACTERIZATION OF OXYGEN IN SILICON
OMARA, WC
PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1985, 524 : 61 - 67
[22] INTERLABORATORY DETERMINATION OF THE CALIBRATION FACTOR FOR THE MEASUREMENT OF THE INTERSTITIAL OXYGEN-CONTENT OF SILICON BY INFRARED-ABSORPTION
BAGHDADI, A
BULLIS, WM
CROARKIN, MC
LI, YZ
SCACE, RI
SERIES, RW
STALLHOFER, P
WATANABE, M
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (07) : 2015 - 2024
[23] INFRARED ABSORPTION BAND IN GERMANIUM
COLLINS, RJ
FAN, HY
PHYSICAL REVIEW, 1952, 86 (04): : 648 - 648
[24] INFRARED ABSORPTION SPECTRUM OF GERMANIUM
HALL, LH
BARDEEN, J
BLATT, FJ
PHYSICAL REVIEW, 1954, 95 (02): : 559 - 560
[25] New infrared absorption bands related to interstitial oxygen in silicon
Hallberg, T
Murin, LI
Lindstrom, JL
Markevich, VP
JOURNAL OF APPLIED PHYSICS, 1998, 84 (05) : 2466 - 2470
[26] New infrared absorption bands related to interstitial oxygen in silicon
J Appl Phys, 5 (2466):
[27] POLARIZATION EFFECT ON INFRARED-ABSORPTION OF OXYGEN PRECIPITATES IN SILICON
BORGHESI, A
PIVAC, B
SASSELLA, A
APPLIED PHYSICS LETTERS, 1992, 60 (07) : 871 - 873
[28] Detection and mapping of oxygen in silicon wafers by scanning infrared absorption
Philippe Torchio
Roland Occelli
International Journal of Infrared and Millimeter Waves, 1997, 18 : 491 - 499
[29] Detection and mapping of oxygen in silicon wafers by scanning infrared absorption
Torchio, P
Occelli, R
INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 1997, 18 (02): : 491 - 499
[30] THE DIFFUSION OF OXYGEN IN SILICON AND GERMANIUM
HAAS, C
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (1-2) : 108 - 111

← 1 2 3 4 5 →