ABSOLUTE CROSS-SECTION OF 1ST-ORDER RAMAN-SCATTERING IN GAAS

被引：42
作者：
GRIMSDITCH, MH
OLEGO, D
CARDONA, M
机构：
[1] Max-Planck-Institut für Festkörperforschung
来源：
PHYSICAL REVIEW B | 1979年 / 20卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.20.1758
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have complemented previous measurements of the dispersion of the relative cross section for first-order Raman scattering in GaAs by determining the corresponding absolute cross section. The results are fitted with a theory based on a simple band-structure model. Values obtained for the deformation-potential constants of the E0 and E1 gaps corresponding to TO phonons are in excellent agreement with theoretical calculations. © 1979 The American Physical Society.
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页码：1758 / 1761
页数：4
相关论文
共 23 条
[1]   ELECTRIC-FIELD-INDUCED INFRARED ABSORPTION AND RAMAN SCATTERING IN DIAMOND [J].
ANASTASSAKIS, E ;
BURSTEIN, E .
PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (06) :1952-+
[2]   ELECTRIC-FIELD-INDUCED INFRARED ABSORPTION IN DIAMOND [J].
ANASTASSAKIS, E ;
IWASA, S ;
BURSTEIN, E .
PHYSICAL REVIEW LETTERS, 1966, 17 (20) :1051-+
[3]  
ASPNES D, COMMUNICATION
[4]  
CALLEJA M, 1978, PHYS REV B, V17, P876
[5]   ABSORPTION SPECTRUM OF GERMANIUM AND ZINC-BLENDE-TYPE MATERIALS AT ENERGIES HIGHER THAN FUNDAMENTAL ABSORPTION EDGE [J].
CARDONA, M ;
HARBEKE, G .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (04) :813-&
[6]   RAMAN TENSOR OF GERMANIUM AND ZINCBLENDE-TYPE SEMICONDUCTORS [J].
CARDONA, M .
SOLID STATE COMMUNICATIONS, 1971, 9 (11) :819-&
[7]  
CARDONA M, 1972, ATOMIC STRUCTURE PRO
[8]  
GRIMSDITCH M, 1978, PHYSICS SEMICONDUCTO, P639
[9]   ELASTIC AND ELASTO-OPTIC CONSTANTS OF RUTILE FROM A BRILLOUIN-SCATTERING STUDY [J].
GRIMSDITCH, MH ;
RAMDAS, AK .
PHYSICAL REVIEW B, 1976, 14 (04) :1670-1682
[10]   ABSOLUTE CROSS-SECTIONS OF 2ND ORDER RAMAN-SCATTERING IN CRYSTALS [J].
GRIMSDITCH, MH .
SOLID STATE COMMUNICATIONS, 1978, 25 (06) :389-392
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