2-BAND NARROW-GAP APPROXIMATION IN THE THEORY OF SEMICONDUCTOR HETEROJUNCTIONS

被引：1

作者：

KANDILAROV, BD ^{[1
]}

DETCHEVA, V ^{[1
]}

机构：

[1] UNIV SOFIA,DEPT SOLID STATE PHYS,SOFIA 1126,BULGARIA

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1978年 / 11卷 / 23期

关键词：

D O I：

10.1088/0022-3719/11/23/005

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L919 / L222

共 12 条

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[7] INTERFACE STATES IN HETEROJUNCTIONS BETWEEN NARROW-GAP SEMICONDUCTORS [J].

KANDILAROV, BD ;

DETCHEVA, V .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (10) :1703-1716

[8]

Kroemer H., 1975, Critical Reviews in Solid State Sciences, V5, P555, DOI 10.1080/10408437508243512

[9]

Milnes AG, 1972, HETEROJUNCTIONS META

[10] THEORY OF SURFACE STATES - GENERAL CRITERIA FOR THEIR EXISTENCE [J].

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