STRUCTURE OF ALUMINUM THIN FILMS ON SILICA SUBSTRATE

被引：0

作者：

Nedilko, S. ^{[1
]}

Rozouvan, S. ^{[1
]}

Prorok, V. ^{[1
]}

Revo, S. ^{[1
]}

Druga, L. ^{[2
]}

机构：

[1] Taras Shevchenko Natl Univ Kyiv, Dept Phys, Glushkova 4b, Kiev, Ukraine

[2] INTEC SA Bucuresti, Bucharest, Romania

来源：

UNIVERSITY POLITEHNICA OF BUCHAREST SCIENTIFIC BULLETIN SERIES B-CHEMISTRY AND MATERIALS SCIENCE | 2013年 / 75卷 / 02期

关键词：

aluminum film; tunnelling microscopy; dangling bonds;

D O I：

暂无

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Aluminum thin films on silicon substrate were studied by a scanning tunnelling microscopy technique. The data obtained with spatial resolution 1nm revealed a - romboidally ordered thin film structure near the border aluminum-silicon and porous in the island's upper parts. The structure was analyzed applying dangling bonds mechanism. Volt-ampere curves demonstrated strong dependency from the film thickness and were interpreted as nanoscale effects.

引用

页码：167 / 174

页数：8

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