ORDERED STRUCTURE IN OMVPE-GROWN GA0.5IN0.5P

被引：109

作者：

KONDOW, M

KAKIBAYASHI, H

MINAGAWA, S

机构：

[1] Hitachi Ltd, Kokubunji, Jpn, Hitachi Ltd, Kokubunji, Jpn

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 88卷 / 02期

关键词：

D O I：

10.1016/0022-0248(88)90285-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：291 / 296

页数：6

共 8 条

[1] STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE [J].

GOMYO, A ;

KOBAYASHI, K ;

KAWATA, S ;

HINO, I ;

SUZUKI, T ;

YUASA, T .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :367-373

[2] EVIDENCE FOR THE EXISTENCE OF AN ORDERED STATE IN GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY AND ITS RELATION TO BAND-GAP ENERGY [J].

GOMYO, A ;

SUZUKI, T ;

KOBAYASHI, K ;

KAWATA, S ;

HINO, I ;

YUASA, T .

APPLIED PHYSICS LETTERS, 1987, 50 (11) :673-675

[3] MOCVD GROWTH OF ALGAINP AT ATMOSPHERIC-PRESSURE USING TRIETHYLMETALS AND PHOSPHINE [J].

IKEDA, M ;

NAKANO, K ;

MORI, Y ;

KANEKO, K ;

WATANABE, N .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :380-385

[4]

IKEDA M, 1987, IEICE OQE8744 TECH R, P105

[5]

KONDOW M, UNPUB J APPL PHYS

[6] GROWTH OF HIGH-QUALITY INGAALP EPILAYERS BY MOCVD USING METHYL METALORGANICS AND THEIR APPLICATION TO VISIBLE SEMICONDUCTOR-LASERS [J].

OHBA, Y ;

ISHIKAWA, M ;

SUGAWARA, H ;

YAMAMOTO, M ;

NAKANISI, T .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :374-379

[7] ATOMIC-STRUCTURE AND ORDERING IN SEMICONDUCTOR ALLOYS [J].

SRIVASTAVA, GP ;

MARTINS, JL ;

ZUNGER, A .

PHYSICAL REVIEW B, 1985, 31 (04) :2561-2564

[8]

SUZUKI T, 1987, IECE OQE8745 TECH RE, P109

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