QUASI-SCHOTTKY BARRIER DIODE ON N-GA-0.47IN-0.53 AS USING A FULLY DEPLETED P+-GA-0.47IN-0.53 AS LAYER GROWN BY MOLECULAR-BEAM EPITAXY

被引：24
作者：
CHEN, CY
CHO, AY
CHENG, KY
GARBINSKI, PA
机构：
来源：
APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 05期
关键词：
D O I：
10.1063/1.93117
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：401 / 403
页数：3
相关论文
共 14 条
[1]  
BUCHER HK, 1973, APPL PHYS LETT, V23, P617, DOI 10.1063/1.1654768
[2]  
Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9
[3]   EVIDENCE FOR TUNNELING IN REVERSE-BIASED III-V PHOTODETECTOR DIODES [J].
FORREST, SR ;
DIDOMENICO, M ;
SMITH, RG ;
STOCKER, HJ .
APPLIED PHYSICS LETTERS, 1980, 36 (07) :580-582
[4]   BACKGROUND CARRIER CONCENTRATION AND ELECTRON-MOBILITY IN LPE IN1-XGAXASYP1-Y LAYERS [J].
GREENE, PD ;
WHEELER, SA ;
ADAMS, AR ;
ELSABBAHY, AN ;
AHMAD, CN .
APPLIED PHYSICS LETTERS, 1979, 35 (01) :78-80
[5]   SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES [J].
KAJIYAMA, K ;
MIZUSHIMA, Y ;
SAKATA, S .
APPLIED PHYSICS LETTERS, 1973, 23 (08) :458-459
[6]   COMPOSITIONAL DEPENDENCE OF THE ELECTRON-MOBILITY IN IN1-XGAXASYP1-Y [J].
LEHENY, RF ;
BALLMAN, AA ;
DEWINTER, JC ;
NAHORY, RE ;
POLLACK, MA .
JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (03) :561-568
[7]   AN IN0.53GA0.47AS JUNCTION FIELD-EFFECT TRANSISTOR [J].
LEHENY, RF ;
NAHORY, RE ;
POLLACK, MA ;
BALLMAN, AA ;
BEEBE, ED ;
DEWINTER, JC ;
MARTIN, RJ .
ELECTRON DEVICE LETTERS, 1980, 1 (06) :110-111
[8]  
LIAO ASH, COMMUNICATION
[9]   VELOCITY-FIELD CHARACTERISTICS OF GA1-XINXP1-YASY QUATERNARY ALLOYS [J].
LITTLEJOHN, MA ;
HAUSER, JR ;
GLISSON, TH .
APPLIED PHYSICS LETTERS, 1977, 30 (05) :242-244
[10]   INCREASING EFFECTIVE BARRIER HEIGHT OF SCHOTTKY CONTACTS TO N-INXGA1-XAS [J].
MORGAN, DV ;
FREY, J .
ELECTRONICS LETTERS, 1978, 14 (23) :737-738
12