共 50 条
- [2] Analysis of deep levels in n-type GaN by transient capacitance methods 1600, American Inst of Physics, Woodbury, NY, USA (76):
- [3] Observation of mid-gap states in n-type GaN with optical-isothermal capacitance transient spectroscopy DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1997, 1998, 160 : 355 - 358
- [5] Characterization of inductively-coupled-plasma damage on n-type GaN using deep-level transient spectroscopy and synchrotron radiation photoemission spectroscopy PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2002, 234 (03): : 835 - 839
- [7] Calibration and Applications of Scanning Capacitance Microscopy: n-Type GaN MICROSCOPY OF SEMICONDUCTING MATERIALS 2007, 2008, 120 : 463 - 466
- [10] CAPACITANCE SPECTROSCOPY OF GAMMA-RADIATION DEFECTS IN N-TYPE GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (03): : 322 - 324