EFFICIENT ELECTROLUMINESCENCE FROM INP DIODES GROWN BY LPE FROM SN SOLUTIONS

被引：20

作者：

SHAY, JL

BACHMANN, KJ

BUEHLER, E

机构：

[1] BELL TEL LABS INC,HOLMDEL,NJ 07733

[2] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1974年 / 24卷 / 04期

关键词：

D O I：

10.1063/1.1655149

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：192 / 194

页数：3

共 7 条

[1]

BACHMANN KJ, TO BE PUBLISHED

[2] EFFICIENT ELECTROLUMINESCENCE FROM INP DIODES GROWN BY LIQUID-PHASE EPITAXY [J].

BLOM, GM ;

WOODALL, JM .

APPLIED PHYSICS LETTERS, 1970, 17 (09) :373-&

[3]

HALL R, 1973, GALLIUM ARSENIDE REL, P177

[4] ULTIMATE LOWER LIMIT OF ATTENUATION IN GLASS OPTICAL WAVEGUIDES [J].

KECK, DB ;

MAURER, RD ;

SCHULTZ, PC .

APPLIED PHYSICS LETTERS, 1973, 22 (07) :307-309

[5] EFFICIENT ELECTROLUMINESCENCE FROM GAAS DIODES AT 300 DEGREES K [J].

RUPPRECHT, H ;

WOODALL, JM ;

KONNERTH, K ;

PETTIT, DG .

APPLIED PHYSICS LETTERS, 1966, 9 (06) :221-+

[6] CDSNP2-INP HETERODIODES FOR NEAR-INFRARED LIGHT-EMITTING DIODES AND PHOTOVOLTAIC DETECTORS [J].

SHAY, JL ;

BACHMANN, KJ ;

BUEHLER, E ;

WERNICK, JH .

APPLIED PHYSICS LETTERS, 1973, 23 (05) :226-228

[7]

SHAY JL, TO BE PUBLISHED

← 1 →