SURFACE BAND BENDING EFFECTS ON PHOTO-LUMINESCENCE INTENSITY IN N-INP SCHOTTKY AND MIS DIODES

被引：29
|
作者：
ANDO, K
YAMAMOTO, A
YAMAGUCHI, M
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 06期
关键词：
D O I：
10.1143/JJAP.20.1107
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1107 / 1112
页数：6
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