SURFACE BAND BENDING EFFECTS ON PHOTO-LUMINESCENCE INTENSITY IN N-INP SCHOTTKY AND MIS DIODES

被引：29

作者：

ANDO, K

YAMAMOTO, A

YAMAGUCHI, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 06期

关键词：

D O I：

10.1143/JJAP.20.1107

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1107 / 1112

页数：6

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