SURFACE BAND BENDING EFFECTS ON PHOTO-LUMINESCENCE INTENSITY IN N-INP SCHOTTKY AND MIS DIODES

被引：29

|

作者：

ANDO, K

YAMAMOTO, A

YAMAGUCHI, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 06期

关键词：

D O I：

10.1143/JJAP.20.1107

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1107 / 1112

页数：6

相关论文

共 50 条

[1] BIAS-DEPENDENT PHOTO-LUMINESCENCE INTENSITIES IN N-INP SCHOTTKY DIODES
ANDO, K
YAMAMOTO, A
YAMAGUCHI, M
JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) : 6432 - 6434
[2] PRESSURE-DEPENDENCE OF PHOTO-LUMINESCENCE OF N-INP
KOBAYASHI, T
TEI, T
AOKI, K
YAMAMOTO, K
ABE, K
JOURNAL OF LUMINESCENCE, 1981, 24-5 (NOV) : 347 - 350
[3] FLAT BAND STATE DETERMINATION OF MIS AND SCHOTTKY INTERFACES BY MODULATED PHOTO-LUMINESCENCE METHOD
ANDO, K
YAMAGUCHI, M
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (07) : 1335 - 1336
[4] MIS DIODES ON N-INP HAVING AN IMPROVED INTERFACE
SHI, ZQ
ANDERSON, WA
SOLID-STATE ELECTRONICS, 1991, 34 (03) : 285 - 289
[5] DEEP TRAPS IN IDEAL N-INP SCHOTTKY DIODES
WHITE, AM
GRANT, AJ
DAY, B
ELECTRONICS LETTERS, 1978, 14 (13) : 409 - 411
[6] SURFACE FIELD-EFFECT OF PHOTO-LUMINESCENCE INTENSITY IN ZNSE SCHOTTKY DIODE
ANDO, K
YAMAMOTO, A
YAMAGUCHI, M
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) : 679 - 680
[7] SURFACE-TREATMENT EFFECT ON PHOTO-LUMINESCENCE OF INP
NAGAI, H
NOGUCHI, Y
JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) : 1544 - 1545
[8] PHOTO-LUMINESCENCE INTENSITY IN INGAASP INP DOUBLE-HETEROSTRUCTURES
YAMAGUCHI, A
KOMIYA, S
UMEBU, I
WADA, O
AKITA, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (05): : L297 - L299
[9] INTERFERENCE EFFECTS ON THE PHOTO-LUMINESCENCE INTENSITY OF MOLECULES NEAR A DIELECTRIC SURFACE
DERI, RJ
CHEMICAL PHYSICS LETTERS, 1983, 98 (05) : 485 - 490
[10] Photoluminescence intensity study of n-InP diodes in the accumulation regime
Ahaitouf, A
Bath, A
Lepley, B
Telia, A
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1996, 156 (01): : 87 - 92

← 1 2 3 4 5 →