SILICON ION-BOMBARDMENT OF SB/SI CONTACTS

被引：3

作者：

MALHERBE, JB ^{[1
]}

WEIMER, KP ^{[1
]}

FRIEDLAND, E ^{[1
]}

BREDELL, LJ ^{[1
]}

FLETCHER, M ^{[1
]}

机构：

[1] UNIV S AFRICA,DEPT PHYS,PRETORIA 0001,SOUTH AFRICA

来源：

SURFACE AND INTERFACE ANALYSIS | 1992年 / 19卷 / 1-12期

关键词：

D O I：

10.1002/sia.740190164

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Si+ bombardment of Sb/n-Si Schottky contacts significantly affects the values of some Schottky parameters even at low dose densities. The parameters considered are the ideality constant n, the saturation current density I(s) and the series resistance R. Before implantation these parameters exhibited large variations due to interface conditions. After implantation more uniform I-V characteristics were observed. Implantation led to higher values for the ideality constant and the series resistance and lower values for the saturation current. The ideality factor showed a decrease with increasing implantation dose. The saturation current and series resistance did not show any dose dependence. The compositional/structural properties of the contacts after ion bombardment are altered at high dose densities. For dose densities-PHI greater-than-or-equal-to 5 X 10(14) Si+ cm-2, alpha-particle channelling showed the silicon substrate to be partly amorphized. This amorphization increased with increasing dose densities. AES and RBS measurements found no evidence of silicide formation. Only slight mixing was observed. Other experimental and theoretical studies either confirm our measurements or confirm the trend of our measurements.

引用

页码：341 / 346

页数：6