HIGH-VOLTAGE ELECTRON-MICROSCOPY OF INTERFACIAL DEFECTS IN GAAS

被引：2

作者：

OSIECKI, R

THOMAS, G

机构：

来源：

MATERIALS SCIENCE AND ENGINEERING | 1972年 / 10卷 / 01期

关键词：

D O I：

10.1016/0025-5416(72)90065-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：53 / &

共 20 条

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ABRAHAMS, MS ;

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[2]

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[3] INTERPRETATION OF ANOMALOUS LAYERS AT GAAS N+-N- STEP JUNCTIONS [J].

BLOCKER, TG ;

COX, RH ;

HASTY, TE .

[4]

BOUCHARD M, 1971, C INTERFACES GRAIN B

[5]

BOUCHARD M, 152 LAWR BERK LAB RE

[6] BULK NEGATIVE-RESISTANCE SEMICONDUCTOR DEVICES [J].

COPELAND, JA .

[7]

Cosslett V. E., 1970, Modern diffraction and imaging techniques in material science, P341

[8]

HIRSCH PB, 1969, ELECTRON MICROSCOPY, P178

[9]

HIRTH JP, 1968, THEORY DISLOCATIONS, P355

[10] MISFIT DISLOCATIONS IN SEMICONDUCTORS [J].

HOLT, DB .