METAL OXIDE THIN FILMS AS PH SENSING MEMBRANE FOR EXTENDED GATE FIELD EFFECT TRANSISTOR

被引：0

作者：

Zulkefle, Muhammad AlHadi ^{[1
]}

Rahman, Rohanieza Abdul ^{[1
]}

Yusof, Khairul Aimi ^{[1
]}

Abdullah, Wan Fazlida Hanim ^{[2
]}

Mahmood, Mohamad Rusop ^{[3
]}

Herman, Sukreen Hana ^{[4
]}

机构：

[1] Univ Teknol MARA, NANOelect Ctr, Shah Alam 40450, Selangor, Malaysia

[2] Univ Teknol MARA, Fac Elect Engn, Shah Alam 40450, Selangor, Malaysia

[3] Univ Teknol MARA UiTM, Fac Sci Appl, IOS, NST, Shah Alam 40450, Selangor, Malaysia

[4] Univ Teknol MARA, Core Frontier Mat & Ind Applicat, Shah Alam 40450, Selangor, Malaysia

来源：

JURNAL TEKNOLOGI | 2016年 / 78卷 / 5-8期

关键词：

Metal oxide; titanium dioxide; (EGFET) pH sensor; sensing membrane; sensitivity; sol-gel spin coating; zinc oxide;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this research, metal oxides (ZnO and TiO2) thin films were fabricated by the sol-gel spin coating method. The thin films were applied as the pH sensing membrane for the extended-gate field effect transistor (EGFET) sensor to distinguish the sensing capability between them. The surface morphology, thin film components and crystalline quality were characterized and the sensor performance of both materials were characterized and compared. The results showed that TiO2 thin film gave higher sensitivity with better linearity compared to the ZnO thin films hence was considered a more suitable material to be used as sensing membrane in EGFET pH sensor compared to zinc oxide. (C) 2016 Penerbit UTM Press. All rights reserved

引用

页码：95 / 100

页数：6

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