CHARACTERIZATION OF SI/SI1-XGEX SUPERLATTICES BY ANODIC-DISSOLUTION

被引：1
|
作者：
GIBBINGS, CJ
TUPPEN, CG
CASEY, SM
机构：
[1] British Telecom Res. Labs., Ipswich
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷 / 05期
关键词：
D O I：
10.1088/0268-1242/5/5/012
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The potential of an electrochemical cell has been found to vary periodically as Si/Si1-xGex superlattices are anodically etched at constant current. A simple anodic etching system has been used to characterise a range of structures, and both 5.6 AA germanium layers in silicon and 2.8 AA silicon layers in germanium have been resolved. A superlattice beneath a 0.5 mu m silicon layer has also been profiled, having removed the capping layer using a fast anodic etch.
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页码：442 / 445
页数：4
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