ATOMIC-SCALE STRUCTURE OF CVD AMORPHOUS SI3N4-BN COMPOSITE

被引：14

作者：

FUKUNAGA, T ^{[1
]}

GOTO, T ^{[1
]}

MISAWA, M ^{[1
]}

HIRAI, T ^{[1
]}

SUZUKI, K ^{[1
]}

机构：

[1] NATL LAB HIGH ENERGY PHYS,OHO,IBARAKI 305,JAPAN

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1987年 / 95-6卷

关键词：

D O I：

10.1016/S0022-3093(87)80724-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1119 / 1126

页数：8

共 10 条

[1] X-RAY-DIFFRACTION STUDY OF THE AMORPHOUS STRUCTURE OF CHEMICALLY VAPOR-DEPOSITED SILICON-NITRIDE [J].

AIYAMA, T ;

FUKUNAGA, T ;

NIIHARA, K ;

HIRAI, T ;

SUZUKI, K .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 33 (02) :131-139

[2] DIRECT TRANSFORMATION OF HEXAGONAL BORON NITRIDE TO DENSER FORMS [J].

BUNDY, FP ;

WENTORF, RH .

JOURNAL OF CHEMICAL PHYSICS, 1963, 38 (05) :1144-&

[3]

GOTO T, IN PRESS

[4]

HIRAI T, 1984, MATER SCI RES, V17, P347

[5] STRUCTURE CHARACTERIZATION OF CVD AMORPHOUS SI3N4 BY PULSED NEUTRON TOTAL SCATTERING [J].

MISAWA, M ;

FUKUNAGA, T ;

NIIHARA, K ;

HIRAI, T ;

SUZUKI, K .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 34 (03) :313-321

[6] CHEMICAL VAPOR-DEPOSITED SILICON-NITRIDE .2. DENSITY AND FORMATION MECHANISM [J].

NIIHARA, K ;

HIRAI, T .

JOURNAL OF MATERIALS SCIENCE, 1976, 11 (04) :604-611

[7] CHEMICAL VAPOR-DEPOSITED SILICON-NITRIDE .1. PREPARATION AND SOME PROPERTIES [J].

NIIHARA, K ;

HIRAI, T .

JOURNAL OF MATERIALS SCIENCE, 1976, 11 (04) :593-603

[8] AN X-RAY STUDY OF BORON NITRIDE [J].

PEASE, RS .

ACTA CRYSTALLOGRAPHICA, 1952, 5 (03) :356-&

[9] TIME-OF-FLIGHT PULSED NEUTRON-DIFFRACTION OF LIQUIDS USING AN ELECTRON LINAC [J].

SUZUKI, K ;

MISAWA, M ;

KAI, K ;

WATANABE, N .

NUCLEAR INSTRUMENTS & METHODS, 1977, 147 (03) :519-528

[10]

WRIGHT AC, 1987, IN PRESS P INT C EFF

← 1 →