ENHANCED OXYGEN DIFFUSION IN SILICON AT THERMAL DONOR FORMATION TEMPERATURE

[1] PRECIPITATION OF OXYGEN AT 485-DEGREES-C - DIRECT EVIDENCE FOR ACCELERATED DIFFUSION OF OXYGEN IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (09) : 3419 - 3424

[2] ON THE OUT-DIFFUSION OF OXYGEN FROM SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 67 (02): : 511 - 516

[3] GOESELE U, 1985, APPL PHYS A, V28, P79

[4] Hahn S., 1986, Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon, P181

[5] HELMREICH D, 1977, SEMICONDUCTOR SILICO, P626

[6] MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON [J]. PHYSICAL REVIEW, 1958, 112 (05): : 1546 - 1554

[7] Lee S. A., UNPUB

[8] OUTDIFFUSION AND DIFFUSION MECHANISM OF OXYGEN IN SILICON [J]. APPLIED PHYSICS LETTERS, 1985, 47 (09) : 1001 - 1003

[9] LEE ST, 1986, OXYGEN CARBON HYDROG, P31

[10] DIFFUSIVITY OF OXYGEN IN SILICON DURING STEAM OXIDATION [J]. APPLIED PHYSICS LETTERS, 1982, 40 (04) : 336 - 337

[1] PRECIPITATION OF OXYGEN AT 485-DEGREES-C - DIRECT EVIDENCE FOR ACCELERATED DIFFUSION OF OXYGEN IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (09) : 3419 - 3424

[2] ON THE OUT-DIFFUSION OF OXYGEN FROM SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 67 (02): : 511 - 516

[3] GOESELE U, 1985, APPL PHYS A, V28, P79

[4] Hahn S., 1986, Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon, P181

[5] HELMREICH D, 1977, SEMICONDUCTOR SILICO, P626

[6] MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON [J]. PHYSICAL REVIEW, 1958, 112 (05): : 1546 - 1554

[7] Lee S. A., UNPUB

[8] OUTDIFFUSION AND DIFFUSION MECHANISM OF OXYGEN IN SILICON [J]. APPLIED PHYSICS LETTERS, 1985, 47 (09) : 1001 - 1003

[9] LEE ST, 1986, OXYGEN CARBON HYDROG, P31

[10] DIFFUSIVITY OF OXYGEN IN SILICON DURING STEAM OXIDATION [J]. APPLIED PHYSICS LETTERS, 1982, 40 (04) : 336 - 337